APD
Part Number.
PSAPD-T1550-D35
⇩ Spec Download
Features
- Top side anode & cathode wire bond pads
- 35um aperture size
- Low dark current and low capacitance
Application
- High speed optical communication
- 10GE PON
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
|---|---|---|---|
| Forward current | If | 3 | mA |
| Reverse current | Ir | 3 | mA |
| Optical input power | Pmax | -5 | dBm |
| Operating temperature | To | -40~85 | ℃ |
| Storage temperature | Ts | -40~100 | ℃ |
Optical and Electrical Characteristics
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Aperture size | D | 35 | um | |||
| Responsivity | R | 7 | A/W | λ=1550nm | ||
| Dark current | Is | 300 | nA | 0.9Vbr | ||
| Temperature coefficient | dV/dT | 0.03 | V/℃ | |||
| Capacitance | C | 0.25 | pF | |||
| O/E bandwidth | BW | 7 | GHz | |||
| Breakdown voltage | Vbr | -25 | -40 | V | 10uA |
Dimensions
| Length | 330(±10) |
| Width | 250(±10) |
| Height | 150(±20) |
| N-PAD | 154 x 74 |
| P-PAD | 174 x 74 |
- *InP is a brittle material and electrostatic sensitive device.
- *These specifications are subject to change without notice.
- *For more information, please contact us using the contact information below.
Part Number.
PSAPD-T1550-Cos
⇩ Spec Download
Features
- 25Gbps data rate
- Back side illuminated APD
- Low dark current and low capacitance
Application
- High speed optical communication
- 5G wireless
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
|---|---|---|---|
| Forward current | If | 3 | mA |
| Reverse current | Ir | 2 | mA |
| Optical input power | Pmax | -5 | dBm |
| Operating temperature | To | -40~85 | ℃ |
| Storage temperature | Ts | -40~100 | ℃ |
Optical and Electrical Characteristics
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Wavelength | λ | 1210 | 1610 | nm | ||
| Responsivity | R | 0.7 | A/W | λ=1550nm | ||
| Dark current | Is | 200 | nA | 0.9Vr | ||
| Capacitance | C | 80 | fF | 0.9Vr | ||
| Breakdown voltage | Vr | -20 | -30 | V | 10uA | |
| Temperature coefficient | dV/dT | 0.02 | V/℃ | |||
| O/E bandwidth | BW | 16 | GHz |
Dimensions
| Chip | 280um × 340um × 200um (±20um) |
| Submount | 340um × 780um × 300um (±30um) |
| Cathode | 260um × 120um |
| Anode | 240um × 120um |
- *InP is a brittle material and electrostatic sensitive device.
- *These specifications are subject to change without notice.