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Photonic Semiconductor

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Home Products Photo diode chip Illuminated PD › PSPD-T1550-R1630

Illuminated PD

PSPD-T1550-R1630
Part Number.
PSPD-T1550-R1630
⇩ Spec Download
Features
  • Side illuminated detector
  • Top side anode and cathode electrode
  • AR coated for high responsivity
  • Low dark current and low capacitance
Application
  • Laser back light power monitoring
  • Optical monitoring system
Absolute Maximum Ratings
ParameterSymbolRatingsUnit
Forward currentIf10mA
Reverse VoltageVr20V
Operating temperatureTo-45~85
Storage temperatureTs-40~100
Optical and Electrical Characteristics
ParameterSymbolMinTypMaxUnitCondition
Wavelengthλ900650nm
Aperture HeightH80150um
Dark currentIs100500pAVr=5V
CapacitanceC3pFVr=3.3V
Breakdown voltageVbr40V1uA
VoltageVf1V3mA
Sensitivity AngleA36°
Dimensions
Length350(±10)
Width380(±10)
Height180(±10)
PAD size80 (unit: um)
1 Step (H/W)75(±5um) / 55(±1.5°)
2 Step (H/W)70(±5um) / 35(±1.5°)
  • *InP is a brittle material and electrostatic sensitive device.
  • *These specifications are subject to change without notice.
  • *For more information, please contact us using the contact information below.