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Home Products Photo diode chip Monitor PD PSPD-T1550-D250

Monitor PD

PSPD-T1550-D250
Part Number.
PSPD-T1550-D250
⇩ Spec Download
Features
  • Planar structure with top anode
  • Aperture size 250um
  • Low dark current
Application
  • Optical monitoring system
Absolute Maximum Ratings
ParameterSymbolRatingsUnit
Forward currentIf10mA
Reverse VoltageVr20V
Operating temperatureTo-45~85
Storage temperatureTs-40~100
Optical and Electrical Characteristics
ParameterSymbolMinTypMaxUnitCondition
Aperture sizeD250um
ResponsivityR0.8A/WVs=3.3V λ=1310nm
ResponsivityR1A/WVs=3.3V λ=1550nm
Dark currentIs0.12nAVs=5V
CapacitanceC4pFVs=3.3V
Breakdown voltageVbr20V1uA
VoltageVf1V3mA
Dimensions
Length400(±20)
Width400(±20)
Height200(±20)
PAD size80 (unit: um)
  • *InP is a brittle material and electrostatic sensitive device.
  • *These specifications are subject to change without notice.
  • *For more information, please contact us using the contact information below.
PSPD-T1550-S250
Part Number.
PSPD-T1550-S250
⇩ Spec Download
Features
  • Planar structure with top anode
  • Aperture size 250um
Application
  • Optical monitoring system
Absolute Maximum Ratings
ParameterSymbolRatingsUnit
Forward currentIf10mA
Reverse VoltageVr20V
Operating temperatureTo-45~85
Storage temperatureTs-40~100
Optical and Electrical Characteristics
ParameterSymbolMinTypMaxUnitCondition
Aperture sizeD250um
ResponsivityR0.8A/WVs=3.3V λ=1310nm
ResponsivityR1A/WVs=3.3V λ=1550nm
Dark currentIs0.12nAVs=5V
CapacitanceC4pFVs=3.3V
Breakdown voltageVbr20V1uA
VoltageVf1V3mA
Dimensions
Length350(±20)
Width350(±20)
Height200(±20)
PAD size75 (unit: um)
  • *InP is a brittle material and electrostatic sensitive device.
  • *These specifications are subject to change without notice.
  • *For more information, please contact us using the contact information below.
PSPD-T1550-D1000
Part Number.
PSPD-T1550-D1000
⇩ Spec Download
Features
  • Planar structure with top anode
  • Large aperture size
  • Low dark current
Application
  • Optical monitoring system
Absolute Maximum Ratings
ParameterSymbolRatingsUnit
Forward currentIf10mA
Reverse VoltageVr20V
Operating temperatureTo-45~85
Storage temperatureTs-40~100
Optical and Electrical Characteristics
ParameterSymbolMinTypMaxUnitCondition
Aperture sizeD1000um
ResponsivityR0.8A/WVs=3.3V λ=1310nm
ResponsivityR1A/WVs=3.3V λ=1550nm
Dark currentIs0.12nAVs=5V
CapacitanceC35pFVs=3.3V
Breakdown voltageVbr20V1uA
VoltageVf1V3mA
Dimensions
Length1200(±20)
Width1200(±20)
Height200(±20)
PAD size120 (unit: um)
  • *InP is a brittle material and electrostatic sensitive device.
  • *These specifications are subject to change without notice.
  • *For more information, please contact us using the contact information below.