⇩ Spec Download

• Planar structure with top anode
• Aperture size 90um
• 2.5G data rate
• Low dark current Low capacitance

• Optical monitoring system

Parameter	Symbol	Ratings	Unit
Forward current	If	10	mA
Reverse Voltage	Vr	20	V
Operating temperature	To	-45~85	℃
Storage temperature	Ts	-40~100	℃

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Aperture size	D		90		um
Responsivity	R	0.8			A/W	Vr=3.3V λ=1310nm
Responsivity	R	1			A/W	Vr=3.3V λ=1550nm
Dark current	Is	0.1		1	nA	Vr=5V
Capacitance	C		1		pF	Vr=3.3V
Breakdown voltage	Vbr	20	30		V	1uA
Voltage	Vf			1	V	3mA

Length	300(±20)
Width	300(±20)
Height	200(±20)
PAD size	80 (unit: um)

• *InP is a brittle material and electrostatic sensitive device.
• *These specifications are subject to change without notice.
• *For more information, please contact us using the contact information below.