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  • Photonic Semiconductor INNOVATION AND VALUE Innovation comes from a different perspective Home>Products>Photo diode chip>Avalanch PD>PSAPD-T1550-D35
  • APD PSAPD-T1550-D35 PSAPD-T1550-Cos Part Number. PSAPD-T1550-D35 Spec Download Features - Top side anode & cathode wire bond pads
    - 35um aperture size
    - Low dark current and low capacitance
    Application - High speed optical communication
    - 10GE PON
    Absolute Maximum Ratings
    Parameter Symbol Ratings um
    Forward current IF 3 mA
    Reverse current IR 3 mA
    Optical input power PMAX -5 dBm
    Operating temperature TO -40~85
    Storage temperature TS -40~100
    Optical and Electrical Characteristics
    Parameter Symbol Min Typ Max um Condition
    Aperture size D 35 um
    Responsivity R 7 A/W λ=1550nm
    Dark current ID 300 nA 0.9VBR
    Temperature coefficient dV/dT 0.03 V/℃
    Capacitance C 0.25 pF
    O/E bandwidth ID 7 GGz
    Breakdown voltage VBR -25 -40 V 10uA
    Dimensions
    Dimensons Unit
    Length 330(±10) Um
    Width 250(±10)
    Height 150(±20)
    N-PAD 154x74
    P-PAD 174x74
    Notice *InP is a brittle material and electrostatic sensitive device.
    *These specifications are subject to change without notice.
    *For more information, please contact us using the contact information below.

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