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  • Photonic Semiconductor INNOVATION AND VALUE Innovation comes from a different perspective Home>Products>Photo diode chip>PIN PD>PSPD-T1550-D90
  • InGaAs PIN PD PSPD-T1550-D90 PSPD-T1310-D45 Part Number. PSPD-T1550-D90 Spec Download Features - Planar structure with top anode
    - Aperture size 90um
    - 2.5G data rate
    - Low dark current Low capacitance
    Application - Optical monitoring system
    Absolute Maximum Ratings
    Parameter Symbol Ratings Unit
    Forward current IF 10 mA
    Reverse Voltage VR 20 V
    Operating temperature TO -45~85
    Storage temperature TS -40~100
    Optical and Electrical Characteristics
    Parameter Symbol Min Typ Max Unit Condition
    Aperture size D 90 um
    Responsivity R 0.8 A/W VR=3.3V
    λ=1310nm
    1 A/W VR=3.3V
    λ=1550nm
    Dark current ID 0.1 1 nA VR=5V
    Capacitance C 1 pF VR=3.3V
    Breakdown voltage VBR 20 30 V 1uA
    Voltage VF 1 V 3mA
    Dimensions
    Dimension Unit
    Length 300(±20) Um
    Width 300(±20)
    Height 200(±20)
    PAD size 80
    Notice *InP is a brittle material and electrostatic sensitive device.
    *These specifications are subject to change without notice.
    *For more information, please contact us using the contact information below.

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