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  • Photonic Semiconductor INNOVATION AND VALUE Innovation comes from a different perspective Home>Products>Photo diode chip>Illuminated PD>PSPD-T1550-R1630
  • Illuminated PD Part Number. PSPD-T1550-R1630 Spec Download Features - Side illuminated detector
    - Top side anode and cathode electrode
    - AR coated for high responsivity
    - Low dark current and low capacitance
    Application - Laser back light power monitoring
    - Optical monitoring system
    Absolute Maximum Ratings
    Parameter Symbol Ratings Unit
    Forward current IF 10 mA
    Reverse Voltage VR 20 V
    Operating temperature TO -45~85
    Storage temperature TS -40~100
    Optical and Electrical Characteristics
    Parameter Symbol Min Typ Max Unit Condition
    Wavelength λ 900 650 nm
    Aperture Hight H 80 150 um
    Dark current ID 100 500 pA VR=5V
    Capacitance C 3 pF VR=3.3V
    Breakdown voltage VBR 40 V 1uA
    Voltage VF 1 V 3mA
    Sensitivity Angle A 36 ˚
    Dimensions
    Dimension Unit
    Length 350(±10) Um
    Width 380(±10)
    Height 180(±10)
    PAD size 80
    1 Step 2 Step
    Height 75(±5um) 70(±5um)
    Width 55(±1.5˚) 35(±1.5˚)
    Notice *InP is a brittle material and electrostatic sensitive device.
    *These specifications are subject to change without notice.
    *For more information, please contact us using the contact information below.

PhoSem Co., Ltd.
Office. 56212 301 RFT, 29 , Geumgu-gil, Jeongup-si, Jeollabuk-do, Republic of Korea
Tel. +82-70-7781-5278 Mobile. +82-10-2471-5278 Mail : hojin@phosem.com
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